PART |
Description |
Maker |
BS62LV8005 BS62LV8005BC BS62LV8005BI BS62LV8005EC |
DDR-II, 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer Very Low Power/Voltage CMOS SRAM 1M X 8 bit
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
IC43R16160 IC43R16160-5T IC43R16160-6T IC43R16160- |
DYNAMIC RAM, DDR 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|
ICS32852 ICSSSTV32852 ICSSSTV32852YHT STV32852YHLF |
SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PBGA114 DDR 24-Bit to 48-Bit Registered Buffer
|
INTEGRATED DEVICE TECHNOLOGY INC Integrated Circuit Systems
|
ASM4SSTVF16859-56QR ASM4SSTVF16859-56QT ASM4SSTVF1 |
2.3 V -2.7 V, DDR 13-bit to 26-bit registered buffer
|
Alliance Semiconductor
|
ICS16859 ICSSSTV16859YG-T ICSSSTV16859YGLF-T |
SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PDSO64 6.10 MM, 0.50 MM PITCH, TSSOP-64 DDR 13-Bit to 26-Bit Registered Buffer
|
Integrated Device Technology, Inc. Integrated Circuit Systems
|
K4H560838F-TC/LA2 K4H560838F-TC/LB3 K4H561638F-TC/ |
256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-PDIP 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
ADC1610S065HN ADC1610S080HN ADC1610S105HN ADC1610S |
Single 16-bit ADC; 65 Msps, 80 Msps, 105 Msps or 125 Msps; CMOS or LVDS DDR digital outputs 1-CH 16-BIT PROPRIETARY METHOD ADC, SERIAL ACCESS, PQCC40
|
NXP Semiconductors
|
24C016 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
|
Integrated Silicon Solution Inc
|
ICS83841BHT ICS83841 ICS83841BH ICS83841BHLF ICS83 |
20 BIT, DDR SDRAM 2:1 MUX
|
Integrated Circuit Syst... ICST[Integrated Circuit Systems]
|
A48P4616B |
16M X 16 Bit DDR DRAM
|
AMIC Technology
|